Nitridation of GaAs(100) by Laser-Induced Decomposition of HN3.

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Abstract:

GaAs can be readily nitridated at low temperatures by photolysis of adsorbed HN3 at 308 nm. The annealing of the exposed and photolyzed samples at 450 K, GaN, AsN and bridged AsNGa species were detected by HREELS and XPS. Further annealing at 780 K caused the desorption of most AsN species while GaN and AsNGa nitrides remained on the surface. Author

Author(s):
Bu, Y. ; Lin, M. C.
Author Organization(s):
EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY
Descriptive Note:
Technical rept.,
Pagination:
0010

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-21-ONR
Contract/Grant Number(s):
N00014-89-J-1235
Monitor Series:
ONR
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*GALLIUM ARSENIDES, *NITRIDES, *LASERS, *DECOMPOSITION, *PHOTOLYSIS, *ADSORPTION, *DESORPTION, *NITROGEN, *HYDRAZOIC ACID, *SILICON, LOW TEMPERATURE, ANNEALING, SURFACES, SINGLE CRYSTALS, CHEMICAL BONDS, HIGH RESOLUTION, ELECTRON ENERGY, LOSSES, X RAY PHOTOELECTRON SPECTROSCOPY
Field(s)/Group(s):
Physical Chemistry, Inorganic Chemistry, Lasers and Masers
Keyword(s):
HREELS(High Resolution Electron Energy Loss Spectroscopy), XPS(X Ray Photoelectron Spectroscopy), Passivation, *HN3(Hydrazoic Acid), *Nitridation
Report Date:
1992 Jan 01