Atomic Layer Epitaxy of Semiconductor Heterostructures

AlGaP and GaP films were deposited on the 100 Si substrates by Atomic Layer Epitaxy ALE in the temperature range between 450 and 600 deg C. Under optimum growth conditions, the growth of GaP and AlGaP was observed to proceed in a two-dimensional 2-D fashion in the initial growth stages. These ALE-grown films have better surface morphology when compared with the corresponding MOCVD-grown films. With an AlGaP buffer layer grown on Si, the subsequent growth of GaAs on the AlGaP-coated Si substrates tends to proceed 2-D growth. This avoids island growth and the two-step growth process currently used.