Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy

reportActive / Technical Report | Accession Number: ADA259773 | Open PDF

Abstract:

Growth and doping of GaN by ECR assisted MBE is reported. We report on the role of the GaN-buffer and AlN-buffer, and their combination on the two dimensional nucleation rate and lateral growth rate. Conditions for quasi layer by layer growth were identified. XRD was used to study secondary phase, the direction and quality of orientational ordering in and out of the substrate, and homogeneous and inhomogeneous strain. Relatively high mobility autodoped films were produced and their transport mechanism was investigated. Intrinsic GaN films were produced and were doped n- and p-type with Si and Mg respectively, without requiring annealing for dopant activation. RIE processing of GaN was developed and metal contacts were investigated. A direct correlation between the metal work function and barrier height was also found.

Author(s):
Moustakas, Theodore D.
Author Organization(s):
BOSTON UNIV MA DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING
Descriptive Note:
Semiannual technical rept. 1 May 1892-30 Apr 1993
Pagination:
0092

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-92-J-1436
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution; JCA_1.2.3_Educating; JCA_1.2.5_Lessons Learned; JCA_5_Command and Control; JCA_5.3_Planning; JCA_4.6_Engineering
Communities of Interest:
Air Platforms
Descriptor(s):
*GROWTH(GENERAL), *FILMS, *EPITAXIAL GROWTH, *CYCLOTRONS, *DOPING, *ELECTRONS, *MOLECULAR BEAM EPITAXY, *ALUMINUM GALLIUM NITRIDES, *GALLIUM NITRIDES, BUFFERS, FUNCTIONS, METALS, MAGNESIUM, ANNEALING, SUBSTRATES, WORK FUNCTIONS, BARRIERS, RESONANCE, SILICON, QUALITY, CORRELATION, PHASE, NITRIDES, NUCLEATION, METAL CONTACTS, HOMOGENEITY, CYCLOTRON RESONANCE, HEIGHT, WORK, TRANSPORT, RATES, SECONDARY, MOBILITY, ACTIVATION, LAYERS, TWO DIMENSIONAL, PROCESSING
Field(s)/Group(s):
Inorganic Chemistry, Physical Chemistry, Crystallography, Particle Accelerators
Keyword(s):
ORDERING, RIE(REACTIVE ION ETCHING), OHMIC CONTACTS, ALUMINUM GALLIUM NITRIDE, ELECTRON CYCLOTRON RESONANCE SOURCE, N DOPING, P DOPING
Report Date:
1992 Oct 30