Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization.

reportActive / Technical Report | Accession Number: ADA259244 | Open PDF

Abstract:

An integrated growth and surface characterization system containing a hot filament reactor, sample transfer station, ESD and XPS has been established to investigate the ALE of diamond films. Complementary experiments concerned with the nucleation of diamond on molten surfaces, e. g., Al and Ge have also been conducted. Formation of GeO2 or an aluminum carbide and the degradation of the diamond by the molten material inhibited nucleation on the melted area. Monocrystalline thin films of Beta-SiC have been achieved in the temperature range of 850 deg -980 deg C by atomic layer-by-layer deposition of Si and C species via sequential exposures of Si100 substrates to Si2H6 and C2H4. A UHV analytical system containing TPD, AES and XPS is being constructed in concert with the SiC ALE studies to determine the reaction chemistry important to this process. An eximer laser ablation system for the ALE of CeO2 has been completed and employed to successfully deposit films of this material on Si100.

Author(s):
Davis, Robert F. ; Bedair, Salah ; El-masry, Nadia ; Glass, Jeffrey T. ; Ferrara, M. B. ; Goeller, P. ; King, S. ; Sumakeris, J. J. ; Tanaka, S. ; Tye, L.
Author Organization(s):
NORTH CAROLINA STATE UNIV AT RALEIGH
Descriptive Note:
Annual rept.
Supplementary Note:
RA414, 068342.
Pagination:
0035

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-91-J-1416
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_1.2.7_Experimentation; JCA_5_Command and Control; JCA_7.1.1_Prevent Kinetic Attack; JCA_7.1_Prevent; JCA_7_Protection; JCA_5.3_Planning; JCA_5.6.3_Assess Achievement of Objectives; JCA_5.6_Monitor; JCA_1.2.5_Lessons Learned; JCA_1.2.3_Educating; JCA_4.5.4_Requirements Definition; JCA_4.5_Operational Contract Support
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*LAYERS, *FILMS, *DIAMONDS, *GROUP IV COMPOUNDS, *EPITAXIAL GROWTH, *ATOMIC PROPERTIES, STATIONS, ABLATION, CARBIDES, NUCLEATION, SURFACES, GERMANIUM, TRANSFER, FILAMENTS, SILICON, CERIUM, ALUMINUM, DEPOSITS, DEPOSITION, CHEMISTRY, DIOXIDES, SILICON CARBIDES, LASERS, SUBSTRATES, SINGLE CRYSTALS, MATERIALS, THIN FILMS, TEMPERATURE, DEGRADATION
Field(s)/Group(s):
Inorganic Chemistry, Physical Chemistry, Crystallography, Solid State Physics
Keyword(s):
ALE(ATOMIC LAYER EPITAXY), REACTORS, MOLTEN, DEVICES, CHARACTERIZATION
Report Date:
1992 Dec 01