Space Charge, Heterojunction and Elastic Stress Effects in Ferroelectric Thin Films

Description of scientific research goals is as follows induce low energy ion bombardment related effects in ferroelectric thin films, to enhancing the oxygen incorporation efficiency to modify the properties understanding space-charge related effects on polarization switching phenomena understanding and correlation of intrinsic multi-tunneling process across heterojunctions in ferroelectric thin films establish correlation between low energy oxygen ion bombardment to space-charge and heterojunction based conduction and their impact on polarization switching correlation of switching mechanism via write voltage time dependence to the low energy induced property modifications.