HF Mosfet Power Amplifiers

reportActive / Technical Report | Accession Number: ADA258384 | Open PDF

Abstract:

Solid state devices are being increasingly used in RF power amplifiers. The work outlined in this paper was performed in order to keep HFRD abreast with the current state of technology, and to develop a potentially useful unit. This report covers the design of RF amplifiers in a general way, presents the performance test results of two HFRD manufactured amplifier modules 200 W and 500 W and compares these with several commercially available units.

Author(s):
Gooley, K. ; Debnam, R. ; Hattam, P.
Author Organization(s):
SURVEILLANCE RESEARCH LAB SALISBURY (AUSTRALIA)
Descriptive Note:
Technical memo.
Pagination:
0039

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SRL-0081-TM
Monitor Series:
SRL/AUS
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.5.2_Task; JCA_5.5_Direct
Modernization Areas:
Microelectronics
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*FIELD EFFECT TRANSISTORS, *POWER AMPLIFIERS, *TRANSISTOR AMPLIFIERS, *RADIOFREQUENCY AMPLIFIERS, TEST AND EVALUATION, FREQUENCY, SOLIDS, WORK, PAPER, AMPLIFIERS, AUSTRALIA, POWER, TRANSMITTERS, HIGH FREQUENCY, PERFORMANCE TESTS
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1992 Feb 01