Group II Cubic Fluorides as Dielectrics for 3-D Integration and GaAs-Based Optoelectronic Structures

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Abstract:

The epitaxial growth of CaxSr1-xF2GaAs100 and GaAsCaxSr1-xF2l00 is investigated. Optimum growth temperature of 5300C, growth rate of 1A sec and composition x0.47 lead to very high crystallinity layers of mixed fluorides on GaAs. The growth of GaA.sCa0.47Sr0.53F2100, rendered much more difficult by the morphology and faceting of the insulating surface, is substantially improved by modifying the fluoride surface by electron irradiation prior to GaAs growth, and by a two-step growth sequence where the interface GaAs is grown at low temperature 300 deg C. Finally, the patterning of the fluoride layer is performed by e-beam exposure. Features as small as 1 micron are drawn and developed on a 2060 deg thick CaF2 layer, opening the possibility of using the fluorides for wave-guides or re-growth of small III-V features.

Author(s):
Kahn, Antoine
Author Organization(s):
PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING
Descriptive Note:
Final rept. Jun 1989-May 1992
Pagination:
0008

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DAAL03-89-K-0035
Monitor Series:
ARO
 Subject Terms
Joint Capability Areas:
JCA_1.4.2_Health Service Delivery; JCA_1.4_Force Support; JCA_6.2.3_Core Enterprise Services; JCA_1.2_Force Preparation; JCA_1_Force Support
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*GALLIUM ARSENIDES, *DIELECTRICS, *SEMICONDUCTORS, *MOLECULAR BEAM EPITAXY, *CALCIUM FLUORIDES, *STRONTIUM COMPOUNDS, TEMPERATURE, LOW TEMPERATURE, SEQUENCES, ELECTRONS, ELECTRON IRRADIATION, BEANS, OPENINGS, FLUORIDES, IRRADIATION, SURFACES, RATES, MORPHOLOGY, INTERFACES, LAYERS
Field(s)/Group(s):
Electrooptical and Optoelectronic Devices, Crystallography, Solid State Physics
Keyword(s):
CALCIUM STRONTIUM FLUORIDES, SEMICONDUCTOR INSULATOR INTERFACES
Report Date:
1992 Aug 03