Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmas

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Abstract:

In-situ ellipsometry, both single wavelength and spectroscopic, has been used to study the electron cyclotron resonance plasma oxidation of Si. Spectroscopic ellipsometry has been used to establish that the best fit optical model for the oxidation is a two layer model where the interface layer forms early and stabilizes and the outer layer is SiO2. The interface layer is modeled well as a mixture of a-Si and oxide. The kinetics of film growth were followed using single wavelength ellipsometry at a temperature insensitive wavelength, and the results were in agreement with the Cabrera-Mott theory.

Author(s):
Joseph, J. ; Hu, Y. Z. ; Irene, E. A.
Author Organization(s):
NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
Descriptive Note:
Technical rept.,
Pagination:
0010

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-45
Contract/Grant Number(s):
N00014-89-J-1178
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_6_Net Centric; JCA_1.2_Force Preparation; JCA_1_Force Support; JCA_6.3_Net Management; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*REACTION KINETICS, *SILICON DIOXIDE, *SILICON, *CYCLOTRON RESONANCE, *OXIDATION, TEMPERATURE, MODELS, THEORY, MIXTURES, ELLIPSOMETERS, RESONANCE, OXIDES, ELECTRONS, FILMS, LAYERS, INTERFACES, SPECTROSCOPY
Field(s)/Group(s):
Physical Chemistry, Crystallography, Plasma Physics and Magnetohydrodynamics
Keyword(s):
SINGLE WAVELENGTH, CABRERA MOTT THEORY
Report Date:
1992 Jul 13