Fabrication of an Insulated Gate Diamond FET for High Temperature Applications

reportActive / Technical Report | Accession Number: ADA251042 | Open PDF

Abstract:

A type IIa natural diamond was implanted with boron to form a p-type channel layer. This layer was then used to fabricate an insulated gate field effect transistor. This is the first reported use of ion implantation to successfully fabricate a field effect device in diamond. Testing was carried out from room temperature to 550 K. Both saturation and pinch-off were observed at room temperature, with a measured transconductance of 6.9 micron Smm. Device failures at elevated temperatures were attributed to gate current leakage through the SiO2, insulator layer.

Author(s):
Zeidler, James R. ; Nguyen, Richard ; Hewett, Charles A. ; Zeisse, Carl R.
Author Organization(s):
NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
Supplementary Note:
Published in Proceedings of the Hi-Temperature Electronics Conference, Jun 1991
Annotation:
Conference paper
Pagination:
0009

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Monitor Series:
OCNR
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*GATES(CIRCUITS), *ION IMPLANTATION, *FIELD EFFECT TRANSISTORS, DETECTION, LAYERS, PROCESSING, FABRICATION, DIAMONDS, ROOM TEMPERATURE, SATURATION, SIGNALS, IMAGES, BORON, CHANNELS, TRANSCONDUCTANCE, TEMPERATURE, FAILURE(ELECTRONICS), IMAGE PROCESSING, IONS
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
PE61152N, WUDN300155
Report Date:
1991 Apr 17