Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization

Research concerned with the atomic layer epitaxy ALE of silicon carbide SiC, diamond c and cerium dioxide CeO2 has been carried out within this reporting period. Equipment for the deposition of each of these materials, as well as experimental procedures for the conduct of the studies are in various stages of design, development and employment. The initial design of the SiC ALE deposition equipment has been tested with the growth of Si on Si100 using dichlorosilane or disilane coupled with the use of atomic hydrogen produced via cracking of molecular hydrogen over a hot tungsten filament. Microbeam analysis revealed epitaxial single crystal films were obtained above a sample temperature of 400 deg C. The equipment for the deposition of C from C2H4 has also been installed. To achieve the ALE of C, the atomic arrangement during the initial nucleation step has received primary consideration. To achieve two-dimensional growth, organic interlayers will be deposited on the substrate followed by diamond growth. Initial results using linolenic acid as the interlayer and subsequent diamond deposition are encouraging. A system for epitaxial growth of CeO2 has been designed and is under construction. Operation in early 1992 is anticipated.