Semiconductor Diamond Technology

reportActive / Technical Report | Accession Number: ADA233085 | Open PDF

Abstract:

This report surveys the progress in a number of research activities pursued this quarter at Research Triangle Institute. Gas phase analysis in diamond producing charges, Determination of substrate effects on the growth of homoepitaxial diamond, F2CH4 gas interactions as a function of temperature, Hydrogen-halogen exchange reactions, Fabrication and testing of a diamond IGFET, and investigation of LiF as an in-situ dopant for diamond. These parallel efforts are designed to advance the state-of-the-art in semiconducting diamond technology. These efforts are encompassing development of doping and fabrication techniques for diamond devices while they are also developing novel deposition technique targetting successful heteroepitaxial growth. Author

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