Growth, Characterization and Device Development in Monocrystalline Diamond Films

reportActive / Technical Report | Accession Number: ADA230186 | Open PDF

Abstract:

In this reporting period, diamond films have been deposited on various polycrystalline metal and 001 Si substrates by biased hot filament chemical vapor deposition, the films characterized by TEM, x-ray diffraction and Raman and Auger spectroscopies and MESFET devices modeled from the properties of diamond. In addition Cu single crystals were implanted at 900 deg C with C ions and other studies initiated in an attempt to achieve heteroepitaxial growth of diamond. Films grown on Si, Ni and W exhibited the highest quality diamond films from the viewpoint of Raman characterization. The model of the MESFET device with gate length 1 micron and width 1 mm showed that significant degradation in RF performance is not expected at 10 GHz.

Author(s):
Davis, Robert F. ; Glass, Jeffrey T. ; Bachmann, Klaus J. ; Trew, R. J.
Author Organization(s):
NORTH CAROLINA STATE UNIV AT RALEIGH
Descriptive Note:
Annual letter rept. 1 Jan-31 Dec 1990
Pagination:
0061

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-90-J-1604
Monitor Series:
OCNR
 Subject Terms
Joint Capability Areas:
JCA_1.2.3_Educating; JCA_5_Command and Control; JCA_5.3_Planning; JCA_4.6_Engineering; JCA_1.2.7_Experimentation; JCA_1.2.5_Lessons Learned
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*DIAMONDS, POLYCRYSTALLINE, DEGRADATION, SPECTROSCOPY, GROWTH(GENERAL), X RAY DIFFRACTION, FILMS, SINGLE CRYSTALS, EPITAXIAL GROWTH, SUBSTRATES, QUALITY, RADIOFREQUENCY, AUGERS, RAMAN SPECTRA, IONS, METALS
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
*DIAMOND THIN FILMS, CHEMICAL VAPOR DEPOSITION, ELECTRONIC DEVICES, ION IMPLANTATION
Report Date:
1991 Dec 31