Floating Gate Circuits in MOSIS

reportActive / Technical Report | Accession Number: ADA230154 | Open PDF

Abstract:

The MOSIS foundry offers a two-poly CMOS process that can be used as a floating gate technology, albeit not with the same performance as commercial EEPROM foundries. This report characterizes the structures and programming techniques necessary to build floating gate structures and associated high-voltage addressing circuitry on the low-noise analog process available through MOSIS. Techniques that are used include Fowler-Nordheim tunneling, channel hot-electron injection, and avalanche injection. The dielectric materials between the floating gate and both the control gate and substrate are characterized. Unconventional lightly doped drain FET devices and additional circuit techniques for handling the high-voltage programming signals are presented. Author

Author(s):
Mann, James R.
Author Organization(s):
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
Descriptive Note:
Technical rept.
Pagination:
0047

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-824, ESD-TR-90-114
Contract/Grant Number(s):
F19628-90-C-0002
Monitor Series:
TR-90-114, DARPA
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*CONTROL, COMPUTER PROGRAMMING, STRUCTURES, DIELECTRICS, GATES(CIRCUITS), SUBSTRATES, ELECTRONS, SIGNALS, CIRCUITS, FOUNDRIES, ANALOG SYSTEMS, CHANNELS, HIGH VOLTAGE, LOW NOISE, AVALANCHE EFFECT(ELECTRONICS), ADDRESSING, INJECTION
Field(s)/Group(s):
Electrical and Electronic Equipment, Quantum Theory and Relativity, Solid State Physics
Keyword(s):
*FLOATING GATES, *GATES(CIRCUITS), FIELD EFFECT TRANSISTORS, CONTROL GATES, FOWLER NORDHEIM TUNNELING, ERASABLE MEMORIES, HOT ELECTRONS, AVALANCHE INJECTION, PE62301E
Report Date:
1990 Nov 01