Polycrystalline Diamond Junction Field Effect Transistors (JFETS)

Landstrass, Maurice; Moyer, Dale

Polycrystalline Diamond Junction Field Effect Transistors (JFETS)

Active / Technical Report | Accession Number: ADA223784 |

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Abstract:

The overall objective of this work is to develop a diamond junction field effect transistor JFET technology. The JFET transistor design is an approach that takes advantage of diamonds large bandgap and utilizes this property to help overcome the lack of shallow dopants. The overall approach is to develop a diamond JFET technology through optimization of junction properties that can utilize near degenerate channel boron doping. The high doping levels are necessary to reduce the boron dopant activation energy. The primary approach is to control the built in junction voltage through nitrogen doping, control junction edge leakage with a passivation technology based on selective oxidation and heavily dope the channel with boron. Keywords Diamond, Transistors, JFET, Doping, Epitaxy, Diodes, Fabrication, Nitrogen, Oxygen, Boron, Polycrystalline, Crystallography, Physics.

Author(s):

Landstrass, Maurice ; Moyer, Dale

Author Organization(s):

CRYSTALLUME MENLO PARK CA

Descriptive Note:

Final rept.

Pagination:

0037

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

Distribution Statement:

Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR

Identifying Numbers

Contract/Grant Number(s):

N00014-89-C-0150

Project Number(s):

S405018

Subject Terms

Joint Capability Areas:

JCA_5.3_Planning; JCA_5_Command and Control; JCA_6.3.3_Spectrum Management; JCA_6_Net Centric; JCA_6.3_Net Management; JCA_1_Force Support; JCA_5.3.3_Develop Strategy; JCA_5.3.4_Develop Courses of Action; JCA_5.3.5_Analyze Courses of Action; JCA_1.2_Force Preparation; JCA_1.2.6_Concepts; JCA_3.2_Engagement; JCA_3_Force Application

Modernization Areas:

Microelectronics

Communities of Interest:

Advanced Electronics

Descriptor(s):

*JUNCTION TRANSISTORS, *FIELD EFFECT TRANSISTORS, *DIAMONDS, HIGH RATE, EDGES, VOLTAGE, NITROGEN, OXYGEN, LEVEL(QUANTITY), DOPING, BORON, CRYSTALLOGRAPHY, PASSIVITY, POLYCRYSTALLINE, OPTIMIZATION, ACTIVATION ENERGY, DIODES, CONTROL

Field(s)/Group(s):

Electrical and Electronic Equipment, Crystallography

Keyword(s):

PE63220, WU01, JUNCTION FIELD EFFECT TRANSISTORS

Report Date:

1990 Jun 30