Silicon Oxidation Studies: Origins of the Properties of Thermally Prepared SiO2 Films

reportActive / Technical Report | Accession Number: ADA221240 | Open PDF

Abstract:

This research comprises a study of the origins of mechanical, optical and electronic properties of thermally grown thin SiO2 films on Si substrates at related to the film growth mechanisms and of the cleaning of Si and InP surfaces.

Author(s):
Irene, Eugene A.
Author Organization(s):
NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
Descriptive Note:
Final rept. May 1986-May 1988
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-86-K-0305
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*FILMS, *SILICON DIOXIDE, GROWTH(GENERAL), INDIUM PHOSPHIDES, SUBSTRATES, OXIDATION, SILICON, ELECTRONICS
Field(s)/Group(s):
Crystallography
Report Date:
1990 Apr 25