Microelectronic Device Reliability

reportActive / Technical Report | Accession Number: ADA218774 | Open PDF

Abstract:

Research on pulsed current electromigration in fine-line VLSI metallization was performed. A test structure containing 6 sample lines was designed in accordance with NBS recommendations Ca. 1987 fabricated by an industrial firm and supplied to Clemson University for continued electromigration research.

Author(s):
Harrison, Jr, James W.
Author Organization(s):
CLEMSON UNIV SC
Descriptive Note:
Final rept. Aug 1986-Aug 1989
Supplementary Note:
DOI: 10.21236/ADA218774
Pagination:
0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ARO-23786.1-EL-F
Contract/Grant Number(s):
DAAL03-86-G-0066
Monitor Series:
23786.1-EL-F, ARO
 Subject Terms
Joint Capability Areas:
JCA_4.6_Engineering; JCA_4.6.1_General Engineering; JCA_1.2_Force Preparation; JCA_1_Force Support; JCA_1.2.3_Educating; JCA_5_Command and Control; JCA_5.5.2_Task; JCA_5.5_Direct
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*MICROELECTRONICS, IONIC CURRENT, ISOTOPE SEPARATION, PULSES, RELIABILITY, TEST AND EVALUATION
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1990 Jan 15