Strong-Inversion Model of Threshold voltage in Modulation Doped Field Effect Transistors: The role of Unintentional Acceptors

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Abstract:

A strong-inversion model, in the depletion layer approximation, of the threshold voltage for modulation doped field-effect transistors MODFETs has been developed. We show that for a range of unintentional acceptor doping densities from 10 to the 13th power to 10 to the 15th power per cu. cm. in typical molecular beam epitaxy MBE -grown structures, threshold voltages may increase by as much as 200 mV. We isolate the contributions of AlGaAs and GaAs to the threshold voltage. We have verified our model by comparing predicted threshold voltages with those measured in typical MBE-grown MODFET structures.

Author(s):
Krantz, R. J. ; Bloss, W. L.
Author Organization(s):
AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS
Descriptive Note:
Technical rept.
Pagination:
0022

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-0089(4925-07)-2, SD-TR-89-61
Contract/Grant Number(s):
F04701-88-C-9989
Monitor Series:
TR-89-61, SD
 Subject Terms
Joint Capability Areas:
JCA_1.2.5_Lessons Learned; JCA_5_Command and Control; JCA_6_Net Centric
Communities of Interest:
Space
Descriptor(s):
*DOPING, *MOLECULAR BEAMS, *EPITAXIAL GROWTH, *ELECTRON ACCEPTORS, VOLTAGE, THRESHOLD EFFECTS, LAYERS, DENSITY, DEPLETION, STRUCTURES
Field(s)/Group(s):
Electrical and Electronic Equipment, Crystallography, Particle Accelerators, Solid State Physics
Report Date:
1989 Jun 01