Ferroelectric Memories

reportActive / Technical Report | Accession Number: ADA201851 | Open PDF

Abstract:

Ferroelectric memory cells have been fabricated using a process compatible with semiconductor VLSI manufacturing techniques. The memory can be made NDRO for strategic and SDI systems using several techniques the most practical is probably a rapid readrestore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems. Keywords include Ferroelectric memory and Nonvolatile RAM.

Author(s):
Messenger, George C.
Author Organization(s):
R AND D ASSOCIATES MARINA DEL REY CA
Descriptive Note:
Technical rept. 1 Nov 1987-1 Mar 1988
Pagination:
0040

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RDA-TR-135602-010, DNA-TR-88-94
Contract/Grant Number(s):
DNA001-85-C-0022
Monitor Series:
TR-88-94, DNA
 Subject Terms
Joint Capability Areas:
JCA_3.2_Engagement; JCA_3_Force Application; JCA_3.2.1_Kinetic Means; JCA_5_Command and Control; JCA_1_Force Support; JCA_6.1.3_Switching and Routing; JCA_1.2_Force Preparation; JCA_6_Net Centric; JCA_1.2.3_Educating; JCA_6.1_Information Transport; JCA_6.4.1_Secure Information Exchange; JCA_5.3_Planning
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*READING, *PLATING, *FERROELECTRIC CRYSTALS, *NONVOLATILE MEMORIES, *CELLS, *WIRE, *COMPUTER PROGRAMS, *MEMORY DEVICES, SOLUTIONS(GENERAL), FERROELECTRICITY, SPACE SYSTEMS, COST EFFECTIVENESS, MANUFACTURING, COSTS
Field(s)/Group(s):
Electrical and Electronic Equipment, Computer Hardware, Electricity and Magnetism
Keyword(s):
PE62715H, WUDH008670
Report Date:
1988 Jun 20