Ion Mixing of Ti and TiO(y) Films on SiO(x)

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Abstract:

The influence of ion implantation on the interfacial chemistry, morphology, and adhesion of Ti and TiOy films on Siox was examined. The TiSiOx and TiOySiOx specimens were implanted with varying doses of 84Kr at different substrate temperatures 2 x 10 to the 16th Krsq. cm at 70 C, 1 x 10 to the 17th Krsq. cm. at 70 C, and 1 x 10 to the 17th Krsq. cm. at 350 C. These 84Kr- implanted specimens were compared to specimens vacuum annealed at 1000 C for 3600 s. Ion implantation intermixed interfacial Ti, Si, and O in both the Ti SiOx and TioySiox specimens, producing interfacial Ti-Si oxide layers. Ion implantation, Spectroscopy, X ray diffraction, Interfacial mixing, Titanium oxides, Silicon oxides.

Author(s):
Galuska, A. A. ; Uht, J. C. ; Adams, P. M. ; Coggi, J. M.
Author Organization(s):
AEROSPACE CORP EL SEGUNDO CA MATERIALS SCIENCES LAB
Descriptive Note:
Technical rept.
Pagination:
0030

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-0086A(2935-12)-4, SD-TR-88-99
Contract/Grant Number(s):
F04701-85-C-0086
Monitor Series:
TR-88-99, SD
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_5_Command and Control; JCA_5.3_Planning; JCA_6_Net Centric; JCA_6.3_Net Management; JCA_8_Building Partnerships; JCA_6.4.1_Secure Information Exchange; JCA_8.2.1_Partner with Governments and Institutions; JCA_8.2_Shape; JCA_1.2.5_Lessons Learned
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SILICON COMPOUNDS, *ION IMPLANTATION, *TITANIUM, *OXIDES, *TITANIUM OXIDES, VACUUM, SUBSTRATES, CHEMISTRY, MIXING, X RAY DIFFRACTION, ADHESION, INTERFACES, SPECTROSCOPY, IONS, TEMPERATURE
Field(s)/Group(s):
Inorganic Chemistry
Keyword(s):
*SILICON OXIDES
Report Date:
1988 Nov 04