Compound Semiconductor Materials, Devices and Circuits

reportActive / Technical Report | Accession Number: ADA197640 | Open PDF

Abstract:

This one year research program on compound semiconductor materials growth, devices and circuits has focused on a organometallic vapor phase epitaxy OMVPE of GaInPGaAs and AlInPGaInP superlattices b enhancement of heterostructure device speed performance via strain layer superlattices and mushroom gates in modulation doped FETs MODFETs, and inserted tunnel barriers heterojunction bipolar devices HBT c fabrication and characterization of MODFET devices with gate lengths to 50 nm d self- consistent Monte Carlo transport formulation and its application to small graded heterostructure devices e optical modulation based on the quantum confined Stark effect and f femtosecond spectroscopy of hot carrier processes using the visible Rh6G laser and a new UV BaB2O4 laser. Keywords Gallium indium phosphide Gallium arsenide Aluminum indium phosphide Field effect transistors Barium borate.

Author(s):
Shealy, J. R. ; Eastman, L. F. ; Wolf, E. D. ; Tasker, P. J. ; Krusius, J. P. ; Tang, C. L.
Author Organization(s):
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
Descriptive Note:
Annual rept. 1 May 1987-30 Apr 1988
Pagination:
0063

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFOSR-TR-88-0738
Contract/Grant Number(s):
F49620-87-C-0044
Task Number(s):
A9
Project Number(s):
2305
Monitor Series:
TR-88-0738, AFOSR
 Subject Terms
Joint Capability Areas:
JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution; JCA_5_Command and Control; JCA_5.5.2_Task; JCA_5.5_Direct; JCA_5.3_Planning; JCA_1.2.3_Educating; JCA_1.3.2_Personnel Management; JCA_1.2.6_Concepts; JCA_1.2.7_Experimentation; JCA_4.5.4_Requirements Definition; JCA_4.5_Operational Contract Support; JCA_1.2.5_Lessons Learned
Modernization Areas:
Microelectronics; Quantum Science and Computing
Communities of Interest:
Advanced Electronics
Descriptor(s):
*GALLIUM ARSENIDES, *STARK EFFECT, *SEMICONDUCTORS, *FIELD EFFECT TRANSISTORS, *INDIUM PHOSPHIDES, *EPITAXIAL GROWTH, *ORGANOMETALLIC COMPOUNDS, *GALLIUM PHOSPHIDES, ALUMINUM, CONFINEMENT(GENERAL), MODULATION, BARIUM, BORATES, HIGH ENERGY, VAPOR PHASES, CHARGE CARRIERS, QUANTUM THEORY, GROWTH(GENERAL), MATERIALS, SPECTROSCOPY, OPTICAL PROPERTIES, ALUMINUM COMPOUNDS
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Keyword(s):
SUPERLATTICES, BARIUM BORATES, FEMTOSECOND TIME, FEMTOSECOND SPECTROSCOPY, ALUMINUM INDIUM PHOSPHIDES, PE61102F, WUAFOSR2305A9
Report Date:
1988 Jun 01