Metal Contacts on Semiconductors.

Active / Technical Report | Accession Number: ADA195679 |

Abstract:

The experiments on metal-semiconductor interfaces have been extended in the last six months using a range of techniques including Raman spectroscopy, photoemission spectroscopy, and transport measurements. The results obtained give complementary information and improve the understanding of Schottky barrier formation. The deposition of Sb on clean cleaved InP 110 surfaces has been investigated most intensively. This SbInP exhibits highly unusual properties amongst metal-semiconductor interfaces. Indium phosphides, Antimony. mjm

Author(s):

Williams, R. H.

Author Organization(s):

UNIVERSITY COLL CARDIFF (UNITED KINGDOM)

Descriptive Note:

Periodic rept. no. 7, 1 Apr-30 Sep 87,

Pagination:

0005

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

RECORD

Collection: TR

Identifying Numbers

Contract/Grant Number(s):

DAJA45-84-C-0028

Subject Terms

Joint Capability Areas:

JCA_6.3.3_Spectrum Management; JCA_1_Force Support; JCA_6.3_Net Management; JCA_6_Net Centric

Modernization Areas:

Microelectronics

Communities of Interest:

Advanced Electronics

Descriptor(s):

*METAL CONTACTS, *SEMICONDUCTORS, ANTIMONY, DEPOSITION, INDIUM PHOSPHIDES, INTERFACES, MEASUREMENT, METALS, PHOTOELECTRIC EMISSION, RAMAN SPECTROSCOPY, SCHOTTKY BARRIER DEVICES, SPECTROSCOPY, TRANSPORT, ANTIMONY, DEPOSITION, INDIUM PHOSPHIDES, INTERFACES, MEASUREMENT, METAL CONTACTS, METALS, PHOTOELECTRIC EMISSION, RAMAN SPECTROSCOPY, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, SPECTROSCOPY, TRANSPORT

Field(s)/Group(s):

Inorganic Chemistry, Electrical and Electronic Equipment

Report Date:

1987 Sep 30