Gas Source MBE (Molecular Beam Epitaxy).

This report describes the equipment acquired and the research performed under the DoD University Research Instrumentation Program grant for Gas Source MBE at Colorado State University. The objective of the research supported by the grant is to grow epitaxial III-V semiconductor films using gaseous materials for molecular beam epitaxy MBE. The grant provided the critical equipment items needed to customize the existing commercial MBE system and allow growth of heteroepitaxial structures that can not be fabricated by other techniques. The resulting gas source MBE materials could provide the optoelectronic device technology required for the high data rate signal processing of the vast quantities of input data expected in future DoD space and ground-based sensing systems. Keywords Molecular beam epitaxy.