Technology Development of a Planar BiPolar Transistor.

reportActive / Technical Report | Accession Number: ADA188761 | Open PDF

Abstract:

The project objective is to develop and demonstrate a Silicon Planar BiPolar Transistor incorporating isolation techniques to achieve an improvement in thermal resistance which supports designs for longer pulse widths and duty factors.

Author(s):
Miguelez, Phil
Author Organization(s):
THOMSON COMPONENTS-MOSTEK CORP MONTGOMERYVILLE PA
Descriptive Note:
Progress rept. 1 Oct-1 Dec 86,
Pagination:
0007

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-86-C-2523
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning; JCA_5.3.3_Develop Strategy; JCA_5.3.4_Develop Courses of Action; JCA_5.3.5_Analyze Courses of Action
Modernization Areas:
Directed Energy
Communities of Interest:
Advanced Electronics
Descriptor(s):
*BIPOLAR TRANSISTORS, *PLANAR STRUCTURES, *SILICON, ISOLATION, JOBS, PULSE RATE, THERMAL RESISTANCE
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1987 Jan 01