Ytterbium Monolayer Diffusion Barriers at Hg(1-x)CD(x)Te/Al Junctions.

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Abstract:

Single layers of Yb at the Hg1-xCdxTe110A1 interface prevent A1-Te reaction and dramatically increase the Hg concentration at the interface. The interlayer-induced change in atomic interdiffusion results in an increase of over two orders of magnitude in the HgTe ratio in the junction region. Semi-empirical calculations of thermodynamic parameters following Miedemas model suggest that other rare earths should also act as effective diffusion barriers at Hg2-XCdXTereactive metal junctions. Keywords Interface reactivity, Diffusion barriers, Metal semiconductor interfaces, Mercury compounds, Cadmium tellurides.

Author(s):
Franciosi, A. ; Raisanen, A. ; Wall, A. ; Chang, S. ; Philip, P.
Author Organization(s):
MINNESOTA UNIV MINNEAPOLIS DEPT OF CHEMICAL ENGINEERING AND MATERIALS SCIENCE
Descriptive Note:
Interim rept. 1 Aug 86-31 Aug 87,
Supplementary Note:
Prepared in cooperation with McDonnell Douglas Research Labs., St. Louis, MO.
Pagination:
0014

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-84-K-0545
 Subject Terms
Joint Capability Areas:
JCA_1_Force Support; JCA_1.2_Force Preparation; JCA_1.2.3_Educating; JCA_6_Net Centric
Communities of Interest:
Advanced Electronics
Descriptor(s):
*CADMIUM TELLURIDES, *MERCURY COMPOUNDS, *YTTERBIUM, BARRIERS, DIFFUSION, INTERFACES, JUNCTIONS, LAYERS, METALS, RARE EARTH COMPOUNDS, RATIOS, REACTIVITIES, SEMICONDUCTORS
Field(s)/Group(s):
Inorganic Chemistry
Keyword(s):
WUNR372162
Report Date:
1987 Oct 23