Alternatives to Arsine: The Atmospheric Pressure Organometallic Chemical Vapor Deposition Growth of GaAs Using Triethylarsenic.

Studies on the homoepitaxial growth of unintentionally doped GaAs by atmospheric pressure organometallic chemical vapor deposition using triethylarsenic and trimethylgallium have been carried out, and the effects of growth temperature, VIII ratio, and flow rate on film characteristics are reported. Mirror-like epitaxial layers of n-type GaAs were obtained at substrate temperatures of 540-650 C and at VIII ratios of 6.7-11. The carrier concentrations for these films were approximately 10 to the 16th - 10 to the 17th CC, and from secondary ion mass spectroscopic analysis, the predominant epilayer impurities were determined to be both carbon and silicon.