Gas Source MBE (Molecular Beam Epitaxy).

Robinson, Gary L.

Gas Source MBE (Molecular Beam Epitaxy).

Active / Technical Report | Accession Number: ADA181214 |

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Abstract:

The objective of the research supported by the grant to grow epitaxial III-V semiconductor films using gaseous source materials for molecular beam epitaxy MBE. The grant provides the critical equipment items needed to customize an existing commercial MBE system and allow growth of heteroepitaxial structures that can not be fabricated by other existing techniques.

Author(s):

Robinson, Gary L.

Author Organization(s):

COLORADO STATE UNIV FORT COLLINS DEPT OF ELECTRICAL ENGINEERING

Descriptive Note:

Interim rept.,

Supplementary Note:

DOI: 10.21236/ADA181214

Pagination:

0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

RECORD

Collection: TR

Identifying Numbers

Report Number(s):

AFOSR-TR-87-0748

Contract/Grant Number(s):

AFOSR-87-0028

Task Number(s):

A3

Project Number(s):

2917

Monitor Series:

TR-87-0748

Subject Terms

Joint Capability Areas:

JCA_1.2_Force Preparation; JCA_1_Force Support; JCA_1.2.3_Educating; JCA_6.4.1_Secure Information Exchange

Modernization Areas:

Microelectronics

Communities of Interest:

Advanced Electronics

Descriptor(s):

*EPITAXIAL GROWTH, *MOLECULAR BEAMS, CRITICAL ASSEMBLIES, GASES, GROUP III COMPOUNDS, GROUP V COMPOUNDS, SEMICONDUCTING FILMS, SOURCES, GROWTH(GENERAL), STRUCTURES

Field(s)/Group(s):

Crystallography

Keyword(s):

PE61102, WUAFOSR2917A3

Report Date:

1987 Mar 01