Fundamental Studies and Device Development in Beta Silicon Carbide.

The research of this period has involved the growth and characterization of cubic Beta-SiC on hexagonal Alpha-SiC substrates. The resulting films were virtually defect free in contrast to those grown on Si. Additional research has included ion implantation at temperatures sufficient to achieve significant dynamic annealing and p-type samples in the as-implanted state. Efforts geared to making devices have included 1 the use of the new etchant gas, NF3, in the RIE mode and SF6 in the plasma etching mode with very positive results in terms of high etch rate and surface smoothness. MESFET and MOS structures have also been fabricated.