Silicon Wafer Cleaning for Integrated Circuit Fabrication,

reportActive / Technical Report | Accession Number: ADA166695 | Open PDF

Abstract:

A comparative study has been made of silicon wafers cleaned using different immersion methods in SPEL. The surfaces so produced have been assessed by various methods. The results obtained after using these cleans are reported and shown to be consistent with those described in the literature. The optimum clean has been found to be that described by RCA. This was adopted in SPEL as a standard procedure in August 1984 and results have been encouraging.

Author(s):
Hardeman, R. W. ; Hodge, A. M.
Author Organization(s):
ROYAL SIGNALS AND RADAR ESTABLISHMENT MALVERN (ENGLAND)
Pagination:
0021

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RSRE-MEMO-3907, DRIC-BR-98724
Monitor Series:
BR-98724
 Subject Terms
Joint Capability Areas:
JCA_5.3_Planning; JCA_5_Command and Control
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*INTEGRATED CIRCUITS, *SILICON, *WAFERS, FABRICATION, CLEANING, UNITED KINGDOM
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Report Date:
1985 Jan 01