Preparation and Characterization of Alumina Films by Sol-Gel Method.

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Abstract:

The method of producing a good dielectric layer such as A12O3 on a III-V semiconductor such as InP is limited by the thermal stability of the substrate. Since InPis reported to be stable only up to about 360 C 1, low temperature synthetic methods must be employed to produce insulating films. A low temperature sol-gel method was used to apply a thin film of alumina on indium phosphide substrates by spin application. The resultant films were characterized by ellipsometry and electron microscopy to determine thickness and porosity. The current-voltage characteristics of the films were measured as a function of annealing temperature.

Author(s):
Brusasco, R. ; Kershaw, R. ; Baglio, J. ; Dwight, K. ; Wold, A.
Author Organization(s):
BROWN UNIV PROVIDENCE RI DEPT OF CHEMISTRY
Descriptive Note:
Technical rept.,
Pagination:
0010

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-38
Contract/Grant Number(s):
N00014-77-C-0387, NSF-DMR82-03667
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*THIN FILMS, *ALUMINUM OXIDES, *SEMICONDUCTING FILMS, METHODOLOGY, TEMPERATURE, THICKNESS, ANNEALING, LOW TEMPERATURE, SYNTHESIS, LAYERS, INSULATION, DIELECTRICS, FILMS, VOLTAGE, THERMAL STABILITY, SUBSTRATES, SEMICONDUCTORS, POROSITY, ELECTRON MICROSCOPY, GROUP III COMPOUNDS, GROUP V COMPOUNDS, SPINNING(MOTION), ELLIPSOMETERS, ELECTRIC CURRENT, INDIUM PHOSPHIDES, COLLOIDS, GELS
Field(s)/Group(s):
Physical Chemistry, Solid State Physics
Keyword(s):
WUNR359653
Report Date:
1986 Jan 29