The Effect of Bulk Traps on the InP (Indium Phosphide) Accumulation Type MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor),

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Abstract:

The enclosed reports represent work performed at USCD on Contract N00014-82-K-2032 entitled Surface and Interfacial Properties of InP and provides a full account of the results obtained during the contract period May 1, 1984 through April 31, 1985. The paper Space charge-limited currents and trapping in semi-insulating InP has now been published in Electron. Device Letters, volume EDL-6, page 356 1985. The manuscript Effect of bulk traps on the InP accumulation type MISFET will be presented as an invited talk at the fall meeting in the Journal of the Electrochemical Society. Author

Author(s):
Meiners, L. G.
Author Organization(s):
CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES
Pagination:
0043

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-82-K-2032
 Subject Terms
Joint Capability Areas:
JCA_1_Force Support; JCA_3.2_Engagement; JCA_3_Force Application; JCA_3.2.1_Kinetic Means; JCA_1.2_Force Preparation; JCA_1.3_Human Capital Management; JCA_5.3_Planning; JCA_5_Command and Control; JCA_1.3.2_Personnel Management
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SEMICONDUCTORS, *INDIUM PHOSPHIDES, SOCIETIES, INTERFACES, ELECTROCHEMISTRY, BULK MATERIALS, ELECTRONS, ACCUMULATION, TRAPS, METAL CONTACTS, ELECTRICAL INSULATION
Field(s)/Group(s):
Solid State Physics
Report Date:
1985 Jan 01