Theoretical Model of Hg(1-x)Cd(x)Te Photovoltaic and Photoconductive Infrared Detectors.

reportActive / Technical Report | Accession Number: ADA158668 | Open PDF

Abstract:

Theoretical models have been developed for calculating the spectral responsivity and noise of Hg1-xCdxTe photovoltaic and photoconductive infrared detectors. These models are based on the classical theories for p-n junctions and sweepout-limited photoconductors. They incorporate numerous empirical expressions for describing all important material parameters of Hgx-xCdxTe as functions of the composition parameter x and temperature. The excess carrier lifetimes in n-type material are calculated by including radiative and Auger processes. In p-type material, Shockley-Read recombination is also included when appropriate. Provisions are made to include surface effects in photoconductors, but 1f noise is neglected. Author

Author(s):
Fote, A. A.
Author Organization(s):
AEROSPACE CORP EL SEGUNDO CA CHEMISTRY AND PHYSICS LAB
Descriptive Note:
Technical rept.,
Supplementary Note:
DOI: 10.21236/ADA158668
Pagination:
0025

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-0084A(5945-07)-1, SD-TR-85-53
Contract/Grant Number(s):
F04701-83-C-0084
Monitor Series:
TR-85-53
 Subject Terms
Joint Capability Areas:
JCA_6_Net Centric
Modernization Areas:
Quantum Science and Computing
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*SEMICONDUCTOR JUNCTIONS, *N TYPE SEMICONDUCTORS, *PHOTOCONDUCTORS, *P TYPE SEMICONDUCTORS, RADIATION, LIFE EXPECTANCY(SERVICE LIFE), MODELS, MATERIALS, THEORY, SURFACE PROPERTIES, AUGER ELECTRONS
Field(s)/Group(s):
Infrared Detection and Detectors, Solid State Physics
Report Date:
1985 Aug 12