Electronic States in Silicon and on Its Interfaces.

The report contains two separate sections 1Properties of the new oxygen donor in silicon and 2Process-induced interface and bulk states in MOS structures. 1 The so-called new oxygen donor defect is formed in Czrochalski-grojwn silicon during annealing at temperatures around 650 C. The general properties are explained by SiOJ sub x precipitates in bulk silicon. The trap spectrum observed is an interface state spectrum for these oxide inclusions. 2 The effect of processing on the generation of interface states and bulk silicon traps is analyzed in MOS structures. Simple VLSI process steps are simulated by postoxidation annealing in the temperature range T600 - 1150 C. Interface and bulk states are strongly generated for anneal temperatures below 900 C. The bulk silicon trap density steeply increases within 100nm from the interface. Keywords include MOS interface states, Bulk Si defects, Thermal donor in Si heterdoping.