Aluminum Nitride Insulator for III-V MIS (Metal-Insulator-Semiconductor) Applications.

reportActive / Technical Report | Accession Number: ADA147842 | Open PDF

Abstract:

A reactive molecular beam epitaxial MBE process has been developed to deposit AlN on GaAs substrates. AlN films on GaAs are being investigated for possible metal-insulator-semiconductor MIS applications. Following chemical etching, atomically clean GaAs substrates are prepared by thermal cleaning in ultra-high vacuum. AlN is grown by using Al and NH3 sources. In situ Auger electron analysis shows no detectable oxygen or carbon contamination in the AlN films. Auger and x-ray analysis are used to confirm the AlN stoichiometry. The AlN is crystalline and has the wurtzite type of crystal structure which is hexagonal with space group P6 sub 3 mc. Far infrared transmission and Raman scattering measurements also identify the films as stoichiometric AlN. Capacitance-voltage measurements for the MIS structures are reported.

Author(s):
Elliott, K. R. ; Grant, R. W. ; Lind, M. D.
Author Organization(s):
ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
Descriptive Note:
Interim rept. Jul 82-Jun 83,
Pagination:
0021

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
MRDC41116.1IR, AFOSR-TR-84-0974
Contract/Grant Number(s):
F49620-82-C-0034
Task Number(s):
B1
Project Number(s):
2306
Monitor Series:
TR-84-0974
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_6_Net Centric; JCA_5_Command and Control; JCA_5.3_Planning; JCA_6.3_Net Management; JCA_6.1_Information Transport
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*ALUMINUM COMPOUNDS, *SEMICONDUCTORS, *NITRIDES, *SEMICONDUCTING FILMS, CRYSTAL STRUCTURE, INSULATION, GALLIUM ARSENIDES, X RAY DIFFRACTION, VOLTAGE, EPITAXIAL GROWTH, SUBSTRATES, MOLECULAR BEAMS, DEPOSITION, X RAY PHOTOELECTRON SPECTROSCOPY, AUGER ELECTRON SPECTROSCOPY, STOICHIOMETRY, CAPACITANCE
Field(s)/Group(s):
Solid State Physics
Keyword(s):
MIS(Metal Insulator Semiconductors), MBE(Molecular Beam Epitaxy), WUAFOSR2306B1, PE61102F
Report Date:
1984 Sep 01