Quartz Rotary-Table Substrate Holder for Epitaxial Growth Reactor.

This paper concerns the design, fabrication and operation of a rotating quartz substrate holder which was developed for a vapor phase epitaxy VPE reactor used to grow the semiconductor InP. This substrate holder is appropriate for exploratory laboratory use and is not readily adaptable for manufacturing applications. This InP epitaxial reactor is arranged so that the vapor species flows parallel to the surface of the substrate during deposition. The crystalline quality of the epilayers grown in a reactor with this geometry has been found to be superior to epilayers grown in a vapor which flows perpendicular to the substrate surface. Under the parallel arrangement, however, distribution of both temperature and vapor species at the substrate can be nonuniform resulting in variations of thickness and composition, especially in large area epilayers. To enhance uniformity of conditions, the holder and therefore the substrate must be rotated during growth. Author