Schottky Barrier Photoelectrodes with a Variable Barrier Height.

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Abstract:

The purpose of this research is to investigate the properties of Schottky barriers formed between semiconductors and ion insertion compounds having continuously and reversibly variable work functions. In Phase I, the diode p-SiMxWO3 M H, Li was studied. LixWO3 thin films, prepared by vacuum evaporation or sputtering, showed work functions spanning the range 4.2-5.2 eV for x 0 to 0.4. Electrical measurements on solid state diodes employing LixWO3 layers revealed a barrier height modulation of 0.06V for this range, limited by significant Fermi level pinning. Photoelectrochemical measurements of HxWO3 coated p-Si electrodes showed that the ion insertion compound enhanced electrode stability and photoresponse in acidic electrolytes. The band bending in naked and coated p-Si electrodes was measured as a function of applied bias using a new technique assessing saturation photovoltage as the electrode is polarized. The slope of these curves, dVBdV, is related inversely to the interface state density, Ds. Ds was significantly reduced by the HxWO3 overlayer. Author

Author(s):
Rauh, R. D. ; Rogers, D. R.
Author Organization(s):
EIC LABS INC NORWOOD MA
Descriptive Note:
Final rept. 26 Sep 83-25 Mar 84,
Pagination:
0031

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
C-757
Contract/Grant Number(s):
N00014-83-C-0763
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_7.2.1_Mitigate Lethal Effects; JCA_7.2_Mitigate; JCA_7_Protection; JCA_5.6.1_Assess Compliance with Guidance; JCA_5.6_Monitor; JCA_1.2.5_Lessons Learned
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Barriers, *Schottky barrier devices, *Silicon, *Semiconductors, *Photovoltaic effect, Electrodes, Evaporation, Work functions, Fermi surfaces, Tungstates, Electrical measurement, Vacuum, Electrolytes, Functions, Saturation, Interfaces, Height, Variables, Diodes, Sputtering, Stability, Density, Modulation, Acids, Bias
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Keyword(s):
WUNRSBI002
Report Date:
1984 May 01