Fiber Optic Light Emitting Diode.

reportActive / Technical Report | Accession Number: ADA133363 | Open PDF

Abstract:

Optimum conditions for the growth of lattice-matched double heterostructures from two material systems, GaInAsPInP and GaAlAsSbGaSb, are described. The quantum efficiency and power output of surface-emitting L.E.D.s 1.3 micrometer and 1.55 micrometer fabricated from both material systems are given. A model relating the fraction of injected electrons to the separation between the direct and indirect conduction band minima is used to explain the low quantum efficiency observed for the GaAlAsSbGaSb L.E.D.s. The spectral width, near and far field of typical 1.3 micrometer GaInAsPInP L.E.D.s were measured. Finally, the modulation bandwidth and coupling efficiency of a packaged device into an optical fiber with a numerical aperture of 0.2 are presented.

Author(s):
Dapkus, P. D. ; Ng, W. ; Law, H. D.
Author Organization(s):
ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER
Descriptive Note:
Final rept. 23 Apr 79-1 Aug 80,
Pagination:
0034

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ERC41025.15FR
Contract/Grant Number(s):
N66001-79-C-0209
 Subject Terms
Joint Capability Areas:
JCA_1.2.5_Lessons Learned
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Light emitting diodes, *Gallium compounds, *Epitaxial growth, Fabrication, Fiber optics transmission lines, Gallium arsenides, Indium phosphides, Antimony, Quantum efficiency, Conduction bands, Optical properties
Field(s)/Group(s):
Fiber Optics and Integrated Optics, Solid State Physics
Report Date:
1980 Aug 01