Laser Chemical Etching of Vias in GaAs.

reportActive / Technical Report | Accession Number: ADA131288 | Open PDF

Abstract:

Rapid drilling of vias in thick wafers 381 micons of GaAs has been achieved by a laser assisted etching process. The technique utilized a CW visible argon ion laser and an etchant gas of low pressure C12. Data on the dependence of the etch rate on the laser power, wavelength and C12 gas pressure are presented.

Author(s):
Tucker, Armin W. ; Birnbaum, Milton
Author Organization(s):
AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAB
Descriptive Note:
Technical rept.,
Pagination:
0018

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TR-0083(3925-01)-2, SD-TR-83-38
Contract/Grant Number(s):
F04701-82-C-0083
Monitor Series:
TR-83-38
 Subject Terms
Joint Capability Areas:
JCA_1.2.7_Experimentation; JCA_5_Command and Control
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Laser beams, *Drilling, *Etching, *Wafers, Chemical milling, Gallium arsenides, Quick reaction, Processing, Chlorine, Low pressure, Power, Frequency
Field(s)/Group(s):
Electrical and Electronic Equipment, Lasers and Masers, Manufacturing and Industrial Engineering and Control of Production Systems
Keyword(s):
Chemical etching, Laser power, Etcat rate
Report Date:
1983 Jun 15