Electron Irradiation Effects in Edge-Defined Film-Fed Growth Ribbon Silicon,

reportActive / Technical Report | Accession Number: ADA126679 | Open PDF

Abstract:

No Abstract Identified

Author(s):
Jaworowski, A. E. ; Oehrlein, G. S. ; Corbett, J. W.
Author Organization(s):
STATE UNIV OF NEW YORK AT ALBANY INST FOR THE STUDY OF DEFECTS IN SOLIDS
Supplementary Note:
Presented at ICDS-12 31 Aug-3 Sep 82 Amsterdam.
Annotation:
Reprint: Electron Irradiation Effects in Edge-Defined Film-Fed Growth Ribbon Silicon.
Pagination:
0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Pub. In Physica, 116b P287-290 1983.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-75-C-0919
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_6.3_Net Management; JCA_6_Net Centric
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SILICON, *ELECTRON IRRADIATION, *SCHOTTKY BARRIER DEVICES, *CRYSTAL GROWTH, REPRINTS, THERMAL STABILITY, TRAPPING(CHARGED PARTICLES), P TYPE SEMICONDUCTORS
Field(s)/Group(s):
Crystallography, Solid State Physics
Keyword(s):
EFG(Edge Defined Film Fed Growth)
Report Date:
1982 Jan 01