Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy,

reportActive / Technical Report | Accession Number: ADA124006 | Open PDF

Abstract:

System effects and data analysis for deep level transient spectroscopy DLTS have been examined and applied to study the deel levels in the GaAs-GaP system. Studies of typical DLTS systems using either the lock-in amplifier or the dual-channel boxcar averager are presented. The effects of non-zero gate width for the boxcar averager, phase angle adjustment for the lock-in amplifier, and response time of a typical commercial capacitance meter are investigated. Errors introduced in the measurements by these effects are calculated for typical cases. Measurements of gold level in silicon are presented, along with calculated corrections. We find the correction to be minimal in the boxcar-averager method, but significant in the lock-in amplifier approach. A DLTS system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge is used employing the diode to be tested along with a dummy diode of similar characteristics. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems . It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77 K and 300 K.

Author(s):
Day, Ding-yuan Samuel
Author Organization(s):
ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB
Descriptive Note:
Doctoral thesis,
Pagination:
0160

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
R-877, UILU-ENG-80-2209
Contract/Grant Number(s):
N00014-79-C-0424, N00014-76-C-0806
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning; JCA_1.2.3_Educating; JCA_1.2.7_Experimentation; JCA_1.3.2_Personnel Management; JCA_1.2.5_Lessons Learned; JCA_4.6_Engineering
Modernization Areas:
Microelectronics
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*SPECTROSCOPY, *GALLIUM ARSENIDES, *TRAPPING(CHARGED PARTICLES), *SEMICONDUCTORS, *VACANCIES(CRYSTAL DEFECTS), *GALLIUM PHOSPHIDES, DIODES, DATA PROCESSING, TRANSIENTS, MEASUREMENT, REACTION TIME, THESES, SILICON, MEASURING INSTRUMENTS, PLANAR STRUCTURES, COMMERCIAL EQUIPMENT, WIDTH, GOLD, CURRENTS, AMPLIFIERS, BRIDGES, CAPACITANCE, APPROACH
Field(s)/Group(s):
Crystallography, Atomic and Molecular Physics and Spectroscopy, Solid State Physics
Keyword(s):
DLTS(Deep Level Transient Spectroscopy), Bridges(Capacitance), Lock in amplifiers, Transient spectroscopy, Deep levels, Electron traps, Planar diodes, Leaky diodes
Report Date:
1980 Mar 01