Photoelectric Spectroscopy of Indium in Silicon.

Photoelectric spectroscopy has been used to study P32, P12, and Breit-Wigner-Fano excited state transitions of indium in silicon. The photoelectric spectra were compared to absorption spectra, and measured as a function of temperature. All P32 and P12 absorption lines are resolved in photoelectric spectra, with the exception of No. 4B. This is the first observation in photoelectric spectra of lines 3 through 10, 3p, and 4p. The temperature dependence of the spectra demonstrates that line intensities are governed by a photothermal ionization process in particular, the activation energy of the line 4 intensity agrees with the theoretical binding energy of the excited state. Details previously observed in the Breit-Wigner-Fano spectra associated with P32 lines 2-10 have also been observed for the first time in the absorption spectra. Author