Analysis of the Temperature Dependence of Resistivity in N-Type Silicon.

reportActive / Technical Report | Accession Number: ADA105192 | Open PDF

Abstract:

This work consists of an analytical development of the observed temperature dependence of the resistivity in n-type silicon. This is accomplished by considering the temperature dependence of each physical parameter such as electron scattering terms contributing to resistivity in various doping ranges. Author

Author(s):
Glaubensklee, Marilyn
Author Organization(s):
BDM CORP ALBUQUERQUE NM
Descriptive Note:
Final rept. 11 Feb 79-30 Apr 80,
Supplementary Note:
DOI: 10.21236/ADA105192
Pagination:
0035

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
BDM/TAC-80-089-TR-R1, DNA-5297F
Contract/Grant Number(s):
DNA001-79-C-0138
Task Number(s):
B097
Project Number(s):
Z99QAXT
Monitor Series:
5297F
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_3.2_Engagement; JCA_3_Force Application; JCA_3.2.1_Kinetic Means; JCA_1_Force Support; JCA_1.3_Human Capital Management; JCA_5.3_Planning; JCA_6_Net Centric; JCA_1.3.2_Personnel Management; JCA_1.2_Force Preparation; JCA_6.1_Information Transport
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*N TYPE SEMICONDUCTORS, *SILICON COMPOUNDS, TEMPERATURE, PHYSICAL PROPERTIES, ELECTRON SCATTERING, ELECTRICAL RESISTANCE, SUBJECT INDEXING, CHEMICAL ANALYSIS
Field(s)/Group(s):
Solid State Physics
Keyword(s):
Temperature dependence, PE62704H, WU07
Report Date:
1981 Mar 16