InGaAsP Quaternary Materials for Near Infrared Detector and Laser Applications

reportActive / Technical Report | Accession Number: ADA094277 | Open PDF

Abstract:

In this project we have been concerned with the liquid phase epitaxial LPE and vapor phase epitaxial VPE growth of this quaternary system. A number of the basic features of the LPE growth of InGaPAs on InP have been identified. InP-In sub 1-x Ga sub x P sub 1-2 As sub z heterostructure lasers and detectors have been constructed and have been studied.

Author(s):
Holonyak, Jr., N. ; Stillman, G. E.
Author Organization(s):
ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL ENGINEERING
Descriptive Note:
Final rept. 1 Jan 1977-29 Feb 1980
Supplementary Note:
DOI: 10.21236/ADA094277
Pagination:
0064

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-77-C-0086, ARPA ORDER-3316
Monitor Series:
DARPA
 Subject Terms
Joint Capability Areas:
JCA_1.3.2_Personnel Management
Modernization Areas:
Quantum Science and Computing
Communities of Interest:
Advanced Electronics
Descriptor(s):
*INFRARED DETECTORS, *INFRARED LASERS, *NEAR INFRARED RADIATION, EPITAXIAL GROWTH, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, LIQUID PHASES, MATERIALS, P TYPE SEMICONDUCTORS, PURITY, QUATERNARY COMPOUNDS, VAPOR PHASES
Field(s)/Group(s):
Lasers and Masers, Infrared Detection and Detectors
Keyword(s):
Heterostructure lasers
Report Date:
1980 Jun 01