Growth of HgCdTe by Modified Molecular Beam Epitaxy

reportActive / Technical Report | Accession Number: ADA091822 | Open PDF

Abstract:

HgCdTe thin films were deposited and annealed by laser radiation. The evaporants were analyzed by mass spectroscopy and their chemical compositions were found to depend on the laser scanning rate. The interaction of a short 10 to the minus 7 sec laser pulse with a crystalline HgCdTe surface was studied. Threshold values for inducing evaporation were determined to be 6 x 10 to the 7th power wcm square centermeters and 2 x 10 to the 7th power wcm square centermeters, respectively.

Author(s):
Cheung, J. T.
Author Organization(s):
ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CA SCIENCE CENTER
Descriptive Note:
Semi-annual technical rept. no. 3, 1 Mar-31 Aug 1980
Supplementary Note:
DOI: 10.21236/ADA091822
Pagination:
0037

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SC5202.9SA
Contract/Grant Number(s):
MDA903-79-C-0188, DARPA ORDER-3704
Monitor Series:
DARPA
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning; JCA_1.2.7_Experimentation; JCA_5.3.3_Develop Strategy; JCA_5.3.4_Develop Courses of Action; JCA_5.3.5_Analyze Courses of Action
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*CADMIUM TELLURIDES, *EPITAXIAL GROWTH, *LASERS, *MERCURY COMPOUNDS, *MOLECULAR BEAMS, ANNEALING, CHEMICAL COMPOSITION, EVAPORATION, LIGHT PULSES, MASS SPECTROSCOPY, RADIATION EFFECTS, SCANNING, THIN FILMS
Field(s)/Group(s):
Atomic and Molecular Physics and Spectroscopy, Mechanics
Keyword(s):
*LASER EVAPORATION, EPILAYERS, LASER ANNEALING, LASER RADIATION
Report Date:
1980 Oct 01