High Temperature Hall Effect in Indium-Doped Silicon.

Apparatus was designed and constructed to make resistivity and Hall coefficient measurements at temperatures up to 875 degrees Kelvin. Data was taken on three indium-doped silicon samples, and resistivity, Hall mobility, and carrier concentration calculated for temperatures through the exhaustion region. The concentrations and activation energies of the various dopants were determined by fitting carrier concentration as a function of temperature to the charge balance equation. Four fits were made to the data from each sample. In order to determine the effect of assuming a Hall scattering factor r-factor of one, fits were made to low temperature data alone and then with the high temperature added. The fits were also made using an empirical, temperature dependent formula for the Hall scattering factor. The results indicated that the temperature dependent r-factor gave better fits for each sample. The values for concentrations and activation energies were also in better agreement with values obtained from other experimental techniques. Author