High Efficiency Solar Panel, Phase II, Gallium Arsenide.

reportActive / Technical Report | Accession Number: ADA079635 | Open PDF

Abstract:

This interim report presents the progress of the GaAs High Efficiency Solar Panel program Phase II goal of development of space qualified solar cells of 16 percent efficiency AMO during the period of September 1977 through January 1979. Results of development research involving the basic GaAs substrate, the epitaxial reactors, LPE growth processes, ohmic contactsmetallizations, welding capability, and environmental testing are included. Efforts to increase substrate size and fabrication yield to enhance the feasibility of larger scale GaAs solar cell production are also detailed. Author

Author(s):
Vendura, G. ; Kamath, S. ; Wolfe, G.
Author Organization(s):
HUGHES AIRCRAFT CO LOS ANGELES CALIF SPACE AND COMMUNICATIONS GROUP
Descriptive Note:
Interim rept. 15 Sep 77-15 Jan 79,
Pagination:
0065

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
HAC-SCG-90324M, HAC-REF-E0773
Contract/Grant Number(s):
F33615-77-C-3150
Task Number(s):
04
Project Number(s):
682J
Monitor Series:
TR-79-2058
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_1.2.7_Experimentation; JCA_5.3_Planning; JCA_5.5.2_Task; JCA_5.5_Direct
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*GALLIUM ARSENIDES, *EPITAXIAL GROWTH, *ELECTRIC CONTACTS, *SOLAR PANELS, EFFICIENCY, SINGLE CRYSTALS, SUBSTRATES, SOLAR CELLS, ARSENIC, CONTROLLED ATMOSPHERES
Field(s)/Group(s):
Electric Power Production and Distribution, Crystallography, Solid State Physics
Keyword(s):
High efficiency, Epitaxial reactors, LPE(Liquid Phase Epitaxy), Ohmic contacts, Bridgman growth, Seed crystals, Contact metallization, WUAFAPL682J0425, PE62203F
Report Date:
1979 Jul 01