Growth of HgCdTe by Modified Molecular Beam Epitaxy

reportActive / Technical Report | Accession Number: ADA075836 | Open PDF

Abstract:

This is the first semi-annual technical report of a program to study a novel approach to the epitaxial growth of HgCdTe. In this report, we describe the general approach in detail. We have also completed the assembly and test of the main chamber. In addition, we also made extensive literature survey on the subject of laser evaporation and estimated the growth.

Author(s):
Cheung, J. T.
Author Organization(s):
ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CA SCIENCE CENTER
Descriptive Note:
Semi-annual rept. no. 1, 1 Mar-31 Aug 1979
Pagination:
0022

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SC5202.3SA
Contract/Grant Number(s):
MDA903-79-C-0188, DARPA ORDER-3704
Monitor Series:
DARPA
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning
Modernization Areas:
Microelectronics
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*CADMIUM ALLOYS, *EPITAXIAL GROWTH, *MERCURY, *MOLECULAR BEAMS, *TELLURIUM ALLOYS, *VACUUM CHAMBERS, *YAG LASERS, ANNEALING, EVAPORATION, HEAT TREATMENT, LASERS, LITERATURE SURVEYS, LOW TEMPERATURE, NEODYMIUM, PULSED LASERS, SUBSTRATES
Field(s)/Group(s):
Lasers and Masers, Metallurgy and Metallography, Crystallography, Particle Accelerators
Keyword(s):
Laser annealing, Laser evaporation
Report Date:
1979 Sep 28