Calculation of the Free Carrier Density Profile in a Semiconductor near an OHMIC Contact,

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Abstract:

In this note, a quantitative attempt is made to answer the question To what depth does the equilibrium free carrier density penetrate into a low doped semiconductor from a heavily doped region interfacing it. The simple answer A few Debye lengths can sometimes prove to be inadequate.

Author(s):
Chandra, Amitabh
Author Organization(s):
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Pagination:
0007

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-75-C-0739
 Subject Terms
Joint Capability Areas:
JCA_3.2_Engagement; JCA_3_Force Application; JCA_3.2.1_Kinetic Means
Communities of Interest:
Advanced Electronics
Descriptor(s):
*CHARGE CARRIERS, *SEMICONDUCTORS, *ELECTRIC CONTACTS, MATHEMATICAL MODELS, INTERFACES, PENETRATION, DOPING, POISSON EQUATION
Field(s)/Group(s):
Numerical Mathematics, Solid State Physics
Keyword(s):
Carrier densities, Density profiles, OHMIC contacts, Intrinsic semiconductors, Carrier penetration, Heavily doped regions, Lightly doped regions, Debye length
Report Date:
1979 Jun 22