A Study of Alloy Scattering in Ga1-xAlxAs,

reportActive / Technical Report | Accession Number: ADA071735 | Open PDF

Abstract:

The temperature dependence of electron mobility of high purity n 10 to the 15th powercc LPE Ga1-xAlxAs layers x .18 has been studied in the range 25 deg K - 110 deg K to measure the extents of alloy-like and ionized impurity scattering. Values of the alloy scattering parameter Delta E which may include a contribution from space charge scattering determined for these samples were found to lie in the range .36 eV to .51 eV, the average being .44 eV. The compensation ratio was found to be about 2, and independent of x. Author

Author(s):
Chandra, Amitabh ; Eastman, Lester F.
Author Organization(s):
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Pagination:
0031

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-75-C-0739
 Subject Terms
Joint Capability Areas:
JCA_1_Force Support; JCA_1.3_Human Capital Management; JCA_5.3_Planning; JCA_5_Command and Control; JCA_1.3.2_Personnel Management; JCA_3.2_Engagement; JCA_3_Force Application; JCA_1.2.7_Experimentation; JCA_3.2.1_Kinetic Means
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*GALLIUM ARSENIDES, *ALUMINUM ARSENIDES, *ELECTRON MOBILITY, SCATTERING, EPITAXIAL GROWTH, SEMICONDUCTORS, IMPURITIES, PURITY, LIQUID PHASES
Field(s)/Group(s):
Solid State Physics
Report Date:
1979 Jun 22