Radiation Effects on Charge-Coupled Devices and other MOS Structures.

reportActive / Technical Report | Accession Number: ADA061309 | Open PDF

Abstract:

This report describes results of radiation effects studies on charge-coupled devices CCDs and other MOS structures. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with such devices with a view toward gaining understanding of benefit to developers of radiation-tolerant devices. A study of neutron damage mechanisms in CCDs was performed with emphasis placed on investigation of dark current increases.

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