Ion Implantation of Wide Bandgap Semiconductors.

reportActive / Technical Report | Accession Number: ADA056125 | Open PDF

Abstract:

The principle dopant studied under this contract is Si n-type. Topics covered in this report include 1 encapsulation technology 2 transferability of Si implantation technology using plasma-deposition silicon nitride encapsulation and 3 problems associated with performing channeling into 110 crystal axes of a 100-oriented GaAs wafer. Author

Author(s):
Anderson, C. L. ; Dunlap, H. L. ; Ramiller, C. L.
Author Organization(s):
HUGHES RESEARCH LABS MALIBU CALIF
Descriptive Note:
Semiannual technical rept. 1 Oct 77-31 Mar 78,
Pagination:
0022

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00173-78-C-0070
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning; JCA_3.2_Engagement; JCA_3_Force Application; JCA_6.1.3_Switching and Routing
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*ION IMPLANTATION, *N TYPE SEMICONDUCTORS, ANNEALING, PLASMAS(PHYSICS), GALLIUM ARSENIDES, SINGLE CRYSTALS, NITROGEN, SILICON, SILANES, WAFERS, ARGON
Field(s)/Group(s):
Solid State Physics
Keyword(s):
Silicon nitride, Encapsulation, PED(Plasma Enhanced Deposition), Plasma Enhanced Deposition
Report Date:
1978 May 01